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Communicated by A. Mediavilla (DICOM) and ellaborated by L.
Gonzalez-Vega
The design of the MESFET transistor requires the solution of the
following nonlinear system of equations for
:

This
system arises when computing the coefficients linked to the derivatives in
the Taylor development of the nonlinearities of the capacity appearing in
the circuit model for the microwave transistor MESFET. These coefficients
are very important when determining the transistor behaviour in the
intermodulation distortion and, currently, almost no model takes care of this
nonlinearity.
This system is converted to an algebraic one by expanding the
cosine function and by introducing the new variables:

In this way the
algebraic problem is reduced to the resolution of the following polynomial
system of 2n equations with 2n unknowns:

where the Aij's and
the Bij's are polynomials with integer coefficients in the
,
and aij. In this case, only real
solutions are required.
The case n=2 is very easily solved and the solution is given by the
following:

where the Uk's are
polynomials in
and the
Vi(s2)'s are polynomials in
. For
example, V0(s2) is:

Two interesting problems remain to be solved with
respect to this problem:
- 1.
- The simplification of the polynomials Ui or Vj(s2) would provide
a better solution: for example in the previous expression of
V0(s2) the first factor can easily be represented as

- 2.
- The solution of the cases n=3 and n=4 requires the manipulation
of very big parametric expressions and one possible way of solving this
problem could be the simplification question addressed before.
Finally, we note that the proposer of this problem considered
the solution for the case n=2 to be very important for his practical purposes,
since he never imagined that such a solution existed.
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